ISSN : 2488-8648
International Journal of Basic Science and Technology
A publication of the Faculty of Science, Federal University Otuoke, Bayelsa State
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ISSN : 2488-8648
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×published date:2016-Dec-16
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Abstract
The electronic band structure of thin film of the orthorhombic Cu4SnS4 using the pseudopotential method within density functional theory framework was performed. LDA+U technique and the projector augmented wave PAW were used in all the calculations. The calculated results showed that Cu4SnS4 is p-type semiconductor with a band gap energy value of 1.57 eV. It was also discovered that the gamma to X transition was critical in the structure of the material.
Keywords: Cu4SnS4 film, band structure of Cu4SnS4, CTS,,
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