ISSN : 2488-8648
International Journal of Basic Science and Technology
A publication of the Faculty of Science, Federal University Otuoke, Bayelsa State
Home About IJBST For Authors Issues Useful Downloads Contact
ISSN : 2488-8648
Home About IJBST For Authors Issues Useful Downloads Contact
Questions are asked and these questions need answers. This is the reason why this page is created to enable us share few worries!
×published date:2016-Dec-16
FULL TEXT in - 
| page 50-54
Abstract
The electronic band structure of thin film of the orthorhombic Cu4SnS4 using the pseudopotential method within density functional theory framework was performed. LDA+U technique and the projector augmented wave PAW were used in all the calculations. The calculated results showed that Cu4SnS4 is p-type semiconductor with a band gap energy value of 1.57 eV. It was also discovered that the gamma to X transition was critical in the structure of the material.
Keywords: Cu4SnS4 film, band structure of Cu4SnS4, CTS,,
Anuar, K., Ho, S.M., Tan, W. T., Atan, M. S.,Kuang, D., Jelas, H.
and Nagalingam, S. (2008). Effect of solution concentration on the
properties of Cu4SnS4 thin films, Mater. Sci. 14, No. 2,101-105
Anuar, K., Nagalingam, S., Tan, W. T. and Ho, S. M. (2010).
Effect of deposition period on the chemical bath deposited
Cu4SnS4 thin films, Rev Soc Quim Peru. 76 (1), 55-60.
Avellaneda, D., Nair, M. T. S. and Nair, P. K. (2010). Cu2SnS3
and Cu4SnS4 thin film via chemical deposition for photovoltaic
application, Journal of Electrochemical society, 157 (6), D346-D352
Fernanders, P. P. A. (2010). A study of ternary Cu2SnS3 and
Cu3SnS4 thin films prepared by sulphurizing stacked metal
precursors, Journal of Physics, 43, 215403-215412. DOI.
http://dx.doi.org/10.1088/0022-3727/43/21/215403
Gaun, H., Hunglie, S., Chao, G. and Viancung, H. (2013).
Structure and optical properties of Cu2SnS3 and Cu4SnS4 thin
films by successive ionic layer adsorption and reaction, Journal of
materials science, materials in electronics, 25 (5) 1490-1494.
Gonze, X., Rignanese, G.-M., Verstraete, M., Beuken, J.-M.,
Pouillon, Y., Caracas, R., Jollet, F., Torrent, M., Zerah, G.,
Mikami, M., Ghosez, Ph., Veithen, M., Raty, J.-Y., Olevano, V.,
Bruneval, F., Reining, L., Godby, R., Onida, G., Hamann, D. R.,
and Allan, D. C. (2005). A brief Introduction to the Abinit
software package. Z. Kristallogr. 220, 558-562.
Gonze, X., Beuken, J.-M., Caracas, R., Detraux, F., Fuchs, M.,
Rignanese, G.-M., Sindic, L., Verstraete, M., Zerah, G., Jollet, F.,
Torrent, M., Roy, A., Mikami, M., Ghosez, P.H., Raty, J.Y., and
Allan, D.C. (2002). First-principles computation of material
properties: the Abinit software project, Computational Materials
Science 25, 478-492
Goto, Y., Kamihara, Y. and Masanori, M. (2013). First principles
calculations of electronic structure for orthorhombic and
monoclinic Cu4SnS4, Phys. Status Solidi C 10, No. 7-8, 1127-1129
Gunnarsson, O. and Schonhammer, K. (1986). Density-functional
treatment of an exactly solvable semiconductor model, Phy. Rev.
Let. 56, 1968-1971
Kuku, T. A., Azi, S. O., Osasona, O. (2006). Electrical properties
of vacuum evaporated PbSnS3 thin films, J Mater Sci 41, 1067-1071.
Kuku, T. A. and Azi, S. O. (1998). Optical properties of
evaporated PbSn3 thin films, J Mater Sci 33, 3193-3196.
Marel, D. and Sawatzky, G. A. (1988). Electron-electron
interaction and localization in d and f transition metals, Phys. Rev.
B 37, 10674-10684.
Monkhorst, H. J. and Park, J. D. (1976). Special points for
Brillouin zone integration, Phys. Rev. B 13, 5188-5192.
Omehe, N. N., Ehika, S. and Azi, S. O. (2013). Electronic and
vibrational properties of PbSnS3, IOSR Journal of Electrical and
Electronics Engineering, vol 5, issue 5, pp 12-17.
Paar, W. H., Miletich, R., Topa, D., Criddle, A. J., De Brodtkorb,
M. K, Amthauer, G., and Tippelt, G. (2000). Suredaite, PbSnS3, a
new mineral species, from the Pirquitas Ag-Sn deposit, NWArgentina: mineralogy and crystal structure, American
Mineralogist, 85, 1066-1075.
Tiweri, D., Chaudhuri, T. K., Shripathi, T., Deshpande, U. and
Rauat, R. (2013). Nontoxic,earth abundant 2% efficient CTS solar
cell based on tetragonal film direct coating from single metalorganic precursor solution, Solar energy materials and solar cells,
vol. 113, pp 165-170.
Wu, D., Knowles, C. R. and Chang, L. L. Y. (1986). Copper-tin
Sulphides in the system Cu-Sn-S, mineralogical magazine, vol. 50,
323-325.
Wu, C., Hu, Z., Wang, C., Shang, H., Yang, J and Xie, Y. (2007).
Hexagonal Cu2SnS3 with metallic character: Another category of
conducting sulfides. Applied physics letters 91, S.143104
http://dx.doi.org/10.1063/1.2790491
Vani, G., Miles, R. W. and Reddy, R. (2013). Preparation and
properties of Cu4SnS4 thin films, International Journal of
Optoelectronic Engineering, 3(1), 1-5 DOI: 10.5923/j.ijoe.
20130301.01
FULL TEXT in - | page 50-54
Issue 2-Apr-Jun
Issue 1-Jan-Mar
Issue 4-Oct-Dec
Issue 3-Jul-Sep
Issue 2-Apr-Jun
Issue 1-Jan-Mar
Issue 4-Oct-Dec
Issue 3-Jul-Sep
Issue 2-Apr-Jun
Issue 1-Jan-Mar
Issue 4-Oct-Dec
Issue 2-Apr-Jun
Issue 1-Jan-Mar
Issue 4-Oct-Dec
Issue 3-Jul-Sep
Issue 4-Oct-Dec
Issue 2-Apr-Jun
Issue 1-Jan-Mar
Issue 4-Oct-Dec
Issue 3-Jul-Sep
Issue 2-Apr-Jun
Issue 4-Oct-Dec
Issue 1-Jan-Mar
Copyright © International Journal of Basic Science and Technology | Faculty of Science, Federal University Otuoke 2019. All Rights Reserved.
P.M.B. 126, Yenagoa. Bayelsa state Nigeria
Get the most recent updates
and be updated your self...